IRF3710ZPBF vs IRF540ZPBF Comparison
Detailed side-by-side comparison of IRF3710ZPBF by Infineon and IRF540ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF3710ZPBF | IRF540ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.88 | $0.62 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | HEXFET (Advanced Process) | HEXFET Power MOSFET (N-Channel DMOS) |
| Drain-Source Voltage (Vdss) | 100 V | β |
| Continuous Drain Current (Id) at Tc=25C | 59 A | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | β |
| Maximum Power Dissipation (Pd) at Tc=25C | 160 W | β |
| On-Resistance RDS(on) at VGS=10V | 18 mOhm (typical) | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg) | 82 nC (typical) | β |
| Maximum Junction Operating Temperature | 175 C | β |
| Gate Drive Voltage (Optimized) | 10 V | β |
| Package | TO-220AB (through-hole, 3 pins) | TO-220AB (through-hole, 3-lead) |
| Mounting Type | Through Hole | Through Hole |
| Pin Configuration | G-D-S (Gate-Drain-Source, standard TO-220) | β |
| Qualification Standard | JEDEC, Normal Level | β |
| RoHS Status | Compliant (PBF suffix) | Compliant |
| Lead-Free | Yes | Yes |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRF540ZPBF |
| Drain-Source Voltage (V_DS) | β | 100 V |
| Continuous Drain Current (I_D) at T_C=25C | β | 36 A |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS maximum rating] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical] |
| On-Resistance R_DS(on) max at V_GS=10V | β | 26.5 mOhm |
| Total Gate Charge (Q_g) | β | 42 nC |
| Power Dissipation (P_D) at T_C=25C | β | 92 W |
| Maximum Junction Temperature | β | 175 C |
| Operating Junction Temperature Range | β | -55 C to +175 C |
| Pin Count | β | 3 (Gate, Drain, Source) |
| Automotive Qualified | β | Yes (per datasheet description) |