IRF3710ZPBF vs IRF540ZPBF Comparación
Comparación detallada lado a lado de IRF3710ZPBF por Infineon y IRF540ZPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF3710ZPBF | IRF540ZPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,88 | $0,62 |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | HEXFET (Advanced Process) | HEXFET Power MOSFET (N-Channel DMOS) |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 59 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (Pd) at Tc=25C | 160 W | — |
| On-Resistance RDS(on) at VGS=10V | 18 mOhm (typical) | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 82 nC (typical) | — |
| Maximum Junction Operating Temperature | 175 C | — |
| Gate Drive Voltage (Optimized) | 10 V | — |
| Encapsulado | TO-220AB (through-hole, 3 pins) | TO-220AB (through-hole, 3-lead) |
| Tipo de montaje | Through Hole | Through Hole |
| Pin Configuration | G-D-S (Gate-Drain-Source, standard TO-220) | — |
| Qualification Standard | JEDEC, Normal Level | — |
| Estado RoHS | Compliant (PBF suffix) | Compliant |
| Lead-Free | Yes | Yes |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF540ZPBF |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D) at T_C=25C | — | 36 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS maximum rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| On-Resistance R_DS(on) max at V_GS=10V | — | 26.5 mOhm |
| Total Gate Charge (Q_g) | — | 42 nC |
| Power Dissipation (P_D) at T_C=25C | — | 92 W |
| Maximum Junction Temperature | — | 175 C |
| Rango de temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Recuento de pines | — | 3 (Gate, Drain, Source) |
| Automotive Qualified | — | Yes (per datasheet description) |