IRF3710ZPBF vs IRF540ZPBF 비교

다음의 상세 나란히 비교: IRF3710ZPBF 제조: Infineon 및 IRF540ZPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF3710ZPBF IRF540ZPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.88 $0.62
트랜지스터 유형 N-Channel MOSFET —
Technology HEXFET (Advanced Process) HEXFET Power MOSFET (N-Channel DMOS)
Drain-Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) at Tc=25C 59 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Maximum Power Dissipation (Pd) at Tc=25C 160 W —
On-Resistance RDS(on) at VGS=10V 18 mOhm (typical) —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) 82 nC (typical) —
Maximum Junction Operating Temperature 175 C —
Gate Drive Voltage (Optimized) 10 V —
패키지 TO-220AB (through-hole, 3 pins) TO-220AB (through-hole, 3-lead)
실장 유형 Through Hole Through Hole
Pin Configuration G-D-S (Gate-Drain-Source, standard TO-220) —
Qualification Standard JEDEC, Normal Level —
RoHS 상태 Compliant (PBF suffix) Compliant
Lead-Free Yes Yes
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF540ZPBF
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D) at T_C=25C — 36 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS maximum rating]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
On-Resistance R_DS(on) max at V_GS=10V — 26.5 mOhm
Total Gate Charge (Q_g) — 42 nC
Power Dissipation (P_D) at T_C=25C — 92 W
Maximum Junction Temperature — 175 C
동작 접합 온도 범위 — -55 C to +175 C
핀 수 — 3 (Gate, Drain, Source)
Automotive Qualified — Yes (per datasheet description)

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