IRF520NPBF vs IRF530NPBF Comparison

Detailed side-by-side comparison of IRF520NPBF by Infineon and IRF530NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF520NPBF IRF530NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $0.38
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Series HEXFET β€”
FET Type N-Channel β€”
Drain-to-Source Voltage (V_DSS) 100 V β€”
Continuous Drain Current (I_D) at Tc 9.7 A β€”
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current value] β€”
Gate-to-Source Voltage (V_GS) max Β±20 V β€”
R_DS(on) max at V_GS=10V 200 mOhm β€”
Total Gate Charge (Q_g) 16.7 nC β€”
Power Dissipation (P_D) at Tc 48 W β€”
Operating Temperature Range -55C to +175C β€”
Package TO-220AB (through-hole) β€”
Mounting Type Through Hole Through Hole
MSL Level 1 (unlimited) N/A (through-hole)
RoHS Status Compliant (Pb-free) Compliant
Lead-Free Finish Yes (PBF suffix) β€”
Technology HEXFET (vertical DMOS) β€”
Part Number β€” IRF530NPBF
Transistor Type β€” N-Channel HEXFET Power MOSFET
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at Tc β€” 17 A
Pulsed Drain Current (IDM) β€” 60 A
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V β€” 90 mOhm (max, approximate per datasheet)
Gate-Source Voltage (VGS) max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” 2.0 V to 4.0 V
Maximum Power Dissition (Pd) at Tc β€” 70 W
Operating Junction Temperature β€” -55 C to +175 C
Package / Case β€” TO-220AB (through-hole)
Avalanche Rated β€” Yes
Configuration β€” Single N-channel, 3 pins (Gate, Drain, Source)

Datasheets & Resources

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