IRF530NPBF - 100V N-Channel HEXFET MOSFET 17A TO-220 | Infineon
MPN: IRF530NPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.92 | $0.92 |
| 10 | $0.78 | $7.80 |
| 100 | $0.62 | $62.00 |
| 500 | $0.51 | $255.00 |
| 1,000 | $0.44 | $440.00 |
| 5,000 | $0.38 | $1,900.00 |
Drop-in alternatives for IRF530NPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF540NPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRL530NPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF520NPBF
✅ Drop-In✓ In Stock
$0.66 / Unit
View Datasheet →IRFZ44NPBF
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →IRFR4615TRLPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.39 / Unit
View Datasheet →STP55NF06L
✅ Drop-In📋 Reference alternative (not in catalog)
IRF530NPBF Maximum Ratings & Electrical Characteristics
| Part Number | IRF530NPBF |
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Transistor Type | N-Channel HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc | 17 A |
| Pulsed Drain Current (IDM) | 60 A |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 90 mOhm (max, approximate per datasheet) |
| Gate-Source Voltage (VGS) max | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V |
| Maximum Power Dissition (Pd) at Tc | 70 W |
| Operating Junction Temperature | -55 C to +175 C |
| Package / Case | TO-220AB (through-hole) |
| Mounting Type | Through Hole |
| Avalanche Rated | Yes |
| RoHS Status | Compliant |
| MSL Level | N/A (through-hole) |
| Configuration | Single N-channel, 3 pins (Gate, Drain, Source) |
IRF530NPBF Pin Configuration
| Pin 1 | Gate — Gate control input (drive to 10V for full enhancement) |
| Pin 2 | Drain — Drain terminal (also electrically tied to the metal tab) |
| Pin 3 | Source — Source terminal (reference for gate drive and current return) |
Safe Operating Area (SOA) - DC
Typical Applications
IRF530NPBF is suitable for 6 applications: DC Motor Drive and H-Bridge, Switch-Mode Power Supply (SMPS), Solenoid and Relay Driver, DC-DC Buck Converter, Audio Amplifier Output Stage, Uninterruptible Power Supply (UPS) and Battery Protection.
DC Motor Drive and H-Bridge
The IRF530NPBF is widely used in brushed DC motor drive and full H-bridge configurations for robotics, automotive accessories, and small industrial drives. Its 17 A continuous drain current at Tc, 100 V VDS rating, and avalanche-rugged HEXFET structure absorb the back-EMF energy from motor inductance during PWM switching at 1-25 kHz. In an H-bridge built from four IRF530NPBF devices, the part can deliver up to 1 HP at 24-48 V bus. The fast switching speed (turn-off time under 100 ns) minimizes deadtime and switching losses. For higher-current motors, paralleling two IRF530NPBF devices is a common practice. A gate drive of 10 V is required for full enhancement and minimum RDS(on).
Recommended
Switch-Mode Power Supply (SMPS)
The IRF530NPBF serves as the main switching element in flyback, forward, and push-pull SMPS topologies up to approximately 200 W output power. Its 100 V VDS rating covers 24 V and 48 V telecom or industrial input rails with adequate margin for leakage-inductance spikes. The HEXFET process delivers low RDS(on) of 90 mOhm for reduced conduction loss, and total gate charge under 50 nC allows switching frequencies up to 100 kHz when paired with a suitable gate driver such as the IRS2181. Avalanche ruggedness is critical for absorbing the energy stored in transformer leakage inductance during turn-off, improving overall reliability. The TO-220AB tab is electrically tied to the drain and must be heatsinked for continuous high-power operation.
Recommended
Solenoid and Relay Driver
The IRF530NPBF is well suited as a low-side switch for driving solenoids, relays, contactors, and other inductive loads in industrial automation and automotive applications. The 17 A continuous current rating exceeds the inrush current of most 12 V and 24 V solenoids, and the part's avalanche rating absorbs the inductive kickback when the coil is de-energized. A flyback diode is typically added across the load for additional margin. The 100 V VDS provides ample headroom for automotive load-dump transients up to 60 V. Logic-level translation is straightforward since the gate is driven to 10-12 V from a microcontroller or pre-driver. The TO-220 package supports chassis-mount heatsinking for continuous duty cycles.
Recommended
DC-DC Buck Converter
The IRF530NPBF functions as the high-side or low-side switch in synchronous and asynchronous buck converters, especially for higher-voltage industrial bus rails. At 100 V VDS it covers 24 V, 36 V, and 48 V inputs with substantial transient margin. Its low RDS(on) of 90 mOhm reduces conduction loss at high duty cycles, and the fast switching speed enables converter frequencies of 50-200 kHz. In a typical 48 V to 12 V buck converter at 5 A load, the IRF530NPBF dissipates roughly 2.5 W and runs comfortably on a small TO-220 clip-on heatsink. Use a dedicated gate driver such as the IRS4427STRPBF to translate logic-level PWM to 10 V gate drive, and add a bootstrap network for high-side operation.
Recommended
Audio Amplifier Output Stage
The IRF530NPBF is occasionally used in the output stage of Class AB audio amplifiers and as the switching element in Class D amplifier modulator power stages. Its low on-resistance and fast switching speed minimize crossover distortion and switching losses respectively. The HEXFET process provides a clean, predictable transfer characteristic that audiophile-grade amplifier builders have trusted since the 1990s. In a Class D amplifier, the IRF530NPBF operates at 250-500 kHz switching frequency with appropriate gate drive and deadtime control. Its 100 V rating supports amplifier rail voltages up to ±35 V. Thermal management is critical at high audio power levels, and the TO-220 tab is typically bolted to a chassis heatsink.
Recommended
Uninterruptible Power Supply (UPS) and Battery Protection
The IRF530NPBF is used as the main disconnect switch and reverse-battery protection element in UPS systems, solar charge controllers, and battery management subsystems. Its 100 V rating comfortably exceeds 48 V battery pack voltages with margin for inductive transients. As a low-side load-disconnect switch, the IRF530NPBF can interrupt 17 A of continuous load current with proper gate drive. For reverse-polarity protection on the high side, a P-channel alternative is usually preferred but the IRF530NPBF works well in low-side reverse-block configurations. The avalanche ruggedness is a key advantage when switching battery-side inductors in UPS inverter front-ends. The TO-220AB package provides robust mechanical mounting in industrial enclosures.
Recommended
Recommended Products Summary
Engineering reference data for IRF530NPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF540NPBF | IRL530NPBF | IRF520NPBF | STP55NF06L |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics |
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 60 V |
| Continuous Drain Current (ID) | 17 A | 33 A | 17 A | 9.2 A | 55 A |
| On-Resistance RDS(on) at VGS=10V | 90 mOhm | 44 mOhm | 100 mOhm (typ) | 200 mOhm | 20 mOhm |
| Gate Threshold VGS(th) | 2.0 - 4.0 V | 2.0 - 4.0 V | 1.0 - 2.0 V (logic-level) | 2.0 - 4.0 V | 1.0 - 2.5 V (logic-level) |
| Power Dissipation (Pd) | 70 W | 130 W | 70 W | 60 W | 90 W |
| RoHS Compliance | Yes (Pb-free) | Yes | Yes | Yes | Yes |
| Unit Price (qty 1, as of 2026-09-14) | $0.92 | $1.20 | $1.05 | $0.85 | $1.40 |
Key Differentiators
- Higher continuous drain current than IRF520NPBF (vs IRF520NPBF)
- Higher VDS rating than IRFZ44NPBF for 48 V bus support (vs IRFZ44NPBF)
- Standard gate threshold (vs logic-level IRL530NPBF) (vs IRL530NPBF)
- Infineon/IR heritage and cross-brand availability (vs STP55NF06L (STMicroelectronics))
Design Notes
Estimated: at VDS=50 V, ID=5 A continuous, the IRF530NPBF dissipates approximately 2.5 W on the TO-220AB tab. With junction-to-case thermal resistance of approximately 1.0 C/W, junction-to-ambient of 62 C/W (no heatsink), the part will rise 35 C above ambient in still air without a heatsink. For continuous operation above 2-3 W dissipation, attach the TO-220 tab to a clip-on or chassis-mounted heatsink with thermal compound. Mounting torque should be 6-8 in-lb to avoid cracking the package.
Keep the gate drive loop (gate driver output to gate, then source back to driver ground) as small as possible, ideally under 1 cm^2. A 10-100 ohm gate resistor (RG) damps ringing caused by gate-source capacitance and stray inductance. Place a 10 kohm resistor from gate to source to ensure the MOSFET stays off when the gate driver is tri-stated during power-up. If the drain trace carries high dV/dt (such as in a switching converter), keep the gate trace away from the drain to avoid capacitive coupling that can cause false turn-on.
Do not exceed VGS = ±20 V - the thin gate oxide will be damaged. Drive VGS to 10-12 V for full enhancement and minimum RDS(on). Always include a gate-source resistor (>=10 kohm) to prevent floating-gate turn-on. When switching inductive loads (motors, solenoids, transformers), use a freewheeling diode or rely on the part's avalanche rating, and verify the avalanche energy (EAS) does not exceed the datasheet rating for your inductance. The TO-220 metal tab is electrically connected to the drain - never assume it is isolated.
The IRF530NPBF has a total gate charge (Qg) of approximately 30-40 nC at VGS=10 V. Estimate: at a switching frequency of 100 kHz, gate-drive power is P_gate = Qg x VGS x f_sw = 40e-9 x 10 x 1e5 = 40 mW per device. This is rarely a limiting factor, but if you parallel multiple devices, multiply by device count. Driver current must be sufficient to charge/discharge the input capacitance in your required switching time: I_g = Qg / t_sw. For 50 ns switching, this is roughly 0.8 A peak gate current.
Compliance Information
Lead-free (Pb-free) per PBF suffix. RoHS compliant per Infineon product page. Not AEC-Q100 qualified - automotive applications should use parts specifically qualified to that standard.
