IRF5305STRRPBF vs IRFR5305TRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF5305STRRPBF disebabkan oleh Infineon dan IRFR5305TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF5305STRRPBF IRFR5305TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor P-Channel MOSFET —
Technology HEXFET (Advanced Process) HEXFET fifth-generation planar MOSFET
Drain-to-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max @ VGS=-10V 60 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] [DATA_NEEDED: VGS(th) range]
Power Dissipation (TC) 110 W —
Power Dissipation (TA) 3.8 W —
Suhu Hubungan Operasi -55C to +175C -55C to +175C
Kemasan D2PAK (TO-263) Surface Mount TO-252AA (DPAK), surface mount
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free / RoHS Yes (Pb-free suffix) Yes (Pb-free, suffix "PBF")
Packaging Tape & Reel (TR) —
Polarity P-Channel —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -31 A
Gate-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=-10V — 65 mΩ
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Power Dissipation (PD) at Tc=25C — 110 W
Avalanche Rated — Yes (fully avalanche rated)
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

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