IRF5305STRRPBF vs IRFR5305TRLPBF Perbandingan

Perbandingan bersamaan detil IRF5305STRRPBF dari Infineon dan IRFR5305TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF5305STRRPBF IRFR5305TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor P-Channel MOSFET —
Technology HEXFET (Advanced Process) HEXFET fifth-generation planar MOSFET
Drain-to-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max @ VGS=-10V 60 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] [DATA_NEEDED: VGS(th) range]
Power Dissipation (TC) 110 W —
Power Dissipation (TA) 3.8 W —
Suhu Hubung Kerja -55C to +175C -55C to +175C
Paket D2PAK (TO-263) Surface Mount TO-252AA (DPAK), surface mount
Tipe Mounting Surface Mount Surface Mount
Lead-Free / RoHS Yes (Pb-free suffix) Yes (Pb-free, suffix "PBF")
Packaging Tape & Reel (TR) —
Polarity P-Channel —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -31 A
Gate-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=-10V — 65 mΩ
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Power Dissipation (PD) at Tc=25C — 110 W
Avalanche Rated — Yes (fully avalanche rated)
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

Spek dan Sumber

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