IRF540ZPBF vs IRF1310NPBF Comparison

Detailed side-by-side comparison of IRF540ZPBF by Infineon and IRF1310NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF540ZPBF IRF1310NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.98
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Part Number IRF540ZPBF β€”
Technology HEXFET Power MOSFET (N-Channel DMOS) HEXFET
Drain-Source Voltage (V_DS) 100 V β€”
Continuous Drain Current (I_D) at T_C=25C 36 A β€”
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] β€”
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS maximum rating] β€”
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] β€”
On-Resistance R_DS(on) max at V_GS=10V 26.5 mOhm β€”
Total Gate Charge (Q_g) 42 nC β€”
Power Dissipation (P_D) at T_C=25C 92 W β€”
Maximum Junction Temperature 175 C 175 C
Operating Junction Temperature Range -55 C to +175 C β€”
Package TO-220AB (through-hole, 3-lead) TO-220AB (through-hole)
Mounting Type Through Hole Through Hole
Pin Count 3 (Gate, Drain, Source) β€”
RoHS Status Compliant Compliant (PBF suffix)
Lead-Free Yes β€”
Automotive Qualified Yes (per datasheet description) β€”
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at TC=25C β€” 42 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM value]
Gate-Source Voltage (VGS) max β€” Β±20 V
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V β€” 36 mOhm
Total Gate Charge (Qg) β€” 73.3 nC
Gate-Source Charge (Qgs) β€” [DATA_NEEDED: Qgs value]
Gate-Drain Charge (Qgd) β€” [DATA_NEEDED: Qgd value]
Power Dissipation (PD) at TC=25C β€” 160 W
Operating Temperature Range β€” -55 C to +175 C

Datasheets & Resources

Browse All Products Create BOM Request Quote