IRF540ZPBF vs IRF1310NPBF Perbandingan

Perbandingan bersamaan detil IRF540ZPBF dari Infineon dan IRF1310NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF540ZPBF IRF1310NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF540ZPBF —
Technology HEXFET Power MOSFET (N-Channel DMOS) HEXFET
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D) at T_C=25C 36 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS maximum rating] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
On-Resistance R_DS(on) max at V_GS=10V 26.5 mOhm —
Total Gate Charge (Q_g) 42 nC —
Power Dissipation (P_D) at T_C=25C 92 W —
Maximum Junction Temperature 175 C 175 C
Rentang Suhu Hubung Kerja -55 C to +175 C —
Paket TO-220AB (through-hole, 3-lead) TO-220AB (through-hole)
Tipe Mounting Through Hole Through Hole
Jumlah Pin 3 (Gate, Drain, Source) —
Status RoHS Compliant Compliant (PBF suffix)
Lead-Free Yes —
Automotive Qualified Yes (per datasheet description) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25C — 42 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM value]
Gate-Source Voltage (VGS) max — ±20 V
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V — 36 mOhm
Total Gate Charge (Qg) — 73.3 nC
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs value]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd value]
Power Dissipation (PD) at TC=25C — 160 W
Rentang Suhu Kerja — -55 C to +175 C

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon