IRF540ZPBF vs IRF1310NPBF 比較
詳細並排比較 IRF540ZPBF 由 Infineon 與 IRF1310NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF540ZPBF | IRF1310NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF540ZPBF | — |
| Technology | HEXFET Power MOSFET (N-Channel DMOS) | HEXFET |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D) at T_C=25C | 36 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS maximum rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| On-Resistance R_DS(on) max at V_GS=10V | 26.5 mOhm | — |
| Total Gate Charge (Q_g) | 42 nC | — |
| Power Dissipation (P_D) at T_C=25C | 92 W | — |
| Maximum Junction Temperature | 175 C | 175 C |
| 工作接面溫度範圍 | -55 C to +175 C | — |
| 封裝 | TO-220AB (through-hole, 3-lead) | TO-220AB (through-hole) |
| 安裝類型 | Through Hole | Through Hole |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| RoHS 狀態 | Compliant | Compliant (PBF suffix) |
| Lead-Free | Yes | — |
| Automotive Qualified | Yes (per datasheet description) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM value] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 36 mOhm |
| Total Gate Charge (Qg) | — | 73.3 nC |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs value] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd value] |
| Power Dissipation (PD) at TC=25C | — | 160 W |
| 工作溫度範圍 | — | -55 C to +175 C |