IRF640NPBF vs IRF2805PBF Comparison
Detailed side-by-side comparison of IRF640NPBF by Infineon and IRF2805PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF640NPBF | IRF2805PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.88 | $1.38 |
| Drain-to-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID) at Tc | 18 A | 75 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | — |
| Total Gate Charge (Qg) | 44.7 nC | 150 nC |
| Operating Junction Temperature | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | HEXFET Power MOSFET (IR MOSFET) |
| Transistor Type | N-Channel Enhancement Mode | — |
| Package | TO-220AB (through-hole, 3-pin) | TO-220AB (3-pin, through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS Status | Compliant | Compliant (Pb-free) |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF2805PBF |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at 25°C | — | 175 A (pulsed / package-limited) |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.7 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 4 V |
| Power Dissipation (PD) at Tc | — | 330 W |
| Maximum Junction Temperature | — | 175 °C |
| Operating Temperature Range | — | -55 °C to +175 °C |
| Configuration | — | Single N-Channel MOSFET |