IRF640NPBF vs IRF2805PBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF640NPBF tarafından Infineon ve IRF2805PBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF640NPBF | IRF2805PBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Drain-to-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID) at Tc | 18 A | 75 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | — |
| Total Gate Charge (Qg) | 44.7 nC | 150 nC |
| İşletim Jant Sıcaklığı | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | HEXFET Power MOSFET (IR MOSFET) |
| Transistor Türü | N-Channel Enhancement Mode | — |
| Paket | TO-220AB (through-hole, 3-pin) | TO-220AB (3-pin, through-hole) |
| Montaj Türü | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS Durumu | Compliant | Compliant (Pb-free) |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF2805PBF |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at 25°C | — | 175 A (pulsed / package-limited) |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.7 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 4 V |
| Power Dissipation (PD) at Tc | — | 330 W |
| Maximum Junction Temperature | — | 175 °C |
| İşletim Sıcaklığı Aralığı | — | -55 °C to +175 °C |
| Configuration | — | Single N-Channel MOSFET |