IRF640NPBF vs IRF2805PBF Vergleich
Detaillierter Direktvergleich von IRF640NPBF von Infineon und IRF2805PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF640NPBF | IRF2805PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,88 | $1,38 |
| Drain-to-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID) at Tc | 18 A | 75 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | — |
| Total Gate Charge (Qg) | 44.7 nC | 150 nC |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | HEXFET Power MOSFET (IR MOSFET) |
| Transistortyp | N-Channel Enhancement Mode | — |
| Gehäuse | TO-220AB (through-hole, 3-pin) | TO-220AB (3-pin, through-hole) |
| Montageart | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS-Status | Compliant | Compliant (Pb-free) |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF2805PBF |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at 25°C | — | 175 A (pulsed / package-limited) |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.7 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 4 V |
| Power Dissipation (PD) at Tc | — | 330 W |
| Maximum Junction Temperature | — | 175 °C |
| Betriebstemperaturbereich | — | -55 °C to +175 °C |
| Configuration | — | Single N-Channel MOSFET |