IRF640NPBF vs IRF2805PBF Perbandingan
Perbandingan bersamaan detil IRF640NPBF dari Infineon dan IRF2805PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF640NPBF | IRF2805PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-to-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID) at Tc | 18 A | 75 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | — |
| Total Gate Charge (Qg) | 44.7 nC | 150 nC |
| Suhu Hubung Kerja | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | HEXFET Power MOSFET (IR MOSFET) |
| Tipe Transistor | N-Channel Enhancement Mode | — |
| Paket | TO-220AB (through-hole, 3-pin) | TO-220AB (3-pin, through-hole) |
| Tipe Mounting | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| Status RoHS | Compliant | Compliant (Pb-free) |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF2805PBF |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at 25°C | — | 175 A (pulsed / package-limited) |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.7 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 4 V |
| Power Dissipation (PD) at Tc | — | 330 W |
| Maximum Junction Temperature | — | 175 °C |
| Rentang Suhu Kerja | — | -55 °C to +175 °C |
| Configuration | — | Single N-Channel MOSFET |