IRF640NPBF vs STP20NF20L Comparison

Detailed side-by-side comparison of IRF640NPBF by Infineon and STP20NF20L by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

STMicroelectronics
STP20NF20L STP20NF20L - 200V 18A N-Ch STripFET MOSFET | STMicroelectronics

STP20NF20L - 200V 18A N-Ch STripFET MOSFET | STMicroelectronics

STP20NF20L ✓ Active

Specification Comparison

Parameter IRF640NPBF STP20NF20L
Brand Infineon STMicroelectronics
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.88 $0.48
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at Tc 18 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) max ±20 V —
Static Drain-to-Source On-Resistance (RDS(on)) 150 mOhm max at VGS = 10 V —
Power Dissipation (PD) at Tc=25C 150 W —
Total Gate Charge (Qg) 44.7 nC —
Operating Junction Temperature -55C to +150C —
Technology HEXFET (5th Generation) STripFET™ (planar silicon gate)
Transistor Type N-Channel Enhancement Mode —
Package TO-220AB (through-hole, 3-pin) TO-220 (through-hole, 3-lead)
Mounting Type Through Hole Through Hole
Avalanche Energy Rated Yes —
dv/dt Rating Dynamic, rated —
RoHS Status Compliant Compliant
Lead-Free Yes (PBF suffix) Yes
Manufacturer Infineon (formerly International Rectifier) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) — 18 A (Tc)
On-Resistance (RDS(on)) — 0.10 Ω (max)
Power Dissipation (PD) — 110 W (Tc)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) min/typ/max]
Gate Charge (Qg) — Low gate charge (STripFET™ optimized)
Input Capacitance (Ciss) — Minimized by STripFET™ process
Operating Temperature Range — [DATA_NEEDED: TJ min/max]
Process Technology — STripFET™ (low Qg, low Ciss)

Datasheets & Resources

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