IRF640NPBF vs STP20NF20L 비교
다음의 상세 나란히 비교: IRF640NPBF 제조: Infineon 및 STP20NF20L 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF640NPBF | STP20NF20L |
|---|---|---|
| 브랜드 | Infineon | STMicroelectronics |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.88 | $0.48 |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | — |
| Total Gate Charge (Qg) | 44.7 nC | — |
| 동작 접합 온도 | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | STripFET™ (planar silicon gate) |
| 트랜지스터 유형 | N-Channel Enhancement Mode | — |
| 패키지 | TO-220AB (through-hole, 3-pin) | TO-220 (through-hole, 3-lead) |
| 실장 유형 | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) | — | 18 A (Tc) |
| On-Resistance (RDS(on)) | — | 0.10 Ω (max) |
| Power Dissipation (PD) | — | 110 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Gate Charge (Qg) | — | Low gate charge (STripFET™ optimized) |
| Input Capacitance (Ciss) | — | Minimized by STripFET™ process |
| 동작 온도 범위 | — | [DATA_NEEDED: TJ min/max] |
| Process Technology | — | STripFET™ (low Qg, low Ciss) |