IRF640NPBF vs STP20NF20L 对比
详细并排对比 IRF640NPBF 出自 Infineon 和 STP20NF20L 出自 STMicroelectronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF640NPBF | STP20NF20L |
|---|---|---|
| 品牌 | Infineon | STMicroelectronics |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.88 | $0.48 |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | — |
| Total Gate Charge (Qg) | 44.7 nC | — |
| 工作结温 | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | STripFET™ (planar silicon gate) |
| 晶体管类型 | N-Channel Enhancement Mode | — |
| 封装 | TO-220AB (through-hole, 3-pin) | TO-220 (through-hole, 3-lead) |
| 安装类型 | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) | — | 18 A (Tc) |
| On-Resistance (RDS(on)) | — | 0.10 Ω (max) |
| Power Dissipation (PD) | — | 110 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Gate Charge (Qg) | — | Low gate charge (STripFET™ optimized) |
| Input Capacitance (Ciss) | — | Minimized by STripFET™ process |
| 工作温度范围 | — | [DATA_NEEDED: TJ min/max] |
| Process Technology | — | STripFET™ (low Qg, low Ciss) |