IRF640NPBF vs STP20NF20L Vergleich
Detaillierter Direktvergleich von IRF640NPBF von Infineon und STP20NF20L von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
STMicroelectronics
STP20NF20L - 200V 18A N-Ch STripFET MOSFET | STMicroelectronics
STP20NF20L ✓ AktivSpezifikationsvergleich
| Parameter | IRF640NPBF | STP20NF20L |
|---|---|---|
| Marke | Infineon | STMicroelectronics |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,88 | $0,48 |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at Tc | 18 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) | 150 mOhm max at VGS = 10 V | — |
| Power Dissipation (PD) at Tc=25C | 150 W | — |
| Total Gate Charge (Qg) | 44.7 nC | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Technology | HEXFET (5th Generation) | STripFET™ (planar silicon gate) |
| Transistortyp | N-Channel Enhancement Mode | — |
| Gehäuse | TO-220AB (through-hole, 3-pin) | TO-220 (through-hole, 3-lead) |
| Montageart | Through Hole | Through Hole |
| Avalanche Energy Rated | Yes | — |
| dv/dt Rating | Dynamic, rated | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) | — | 18 A (Tc) |
| On-Resistance (RDS(on)) | — | 0.10 Ω (max) |
| Power Dissipation (PD) | — | 110 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Gate Charge (Qg) | — | Low gate charge (STripFET™ optimized) |
| Input Capacitance (Ciss) | — | Minimized by STripFET™ process |
| Betriebstemperaturbereich | — | [DATA_NEEDED: TJ min/max] |
| Process Technology | — | STripFET™ (low Qg, low Ciss) |