IRF7319TRPBF vs IRF7205TRPBF Perbandingan

Perbandingan bersamaan detil IRF7319TRPBF dari Infineon dan IRF7205TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7319TRPBF IRF7205TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Type Dual MOSFET Array (N-channel + P-channel) —
Technology IR MOSFET / Fifth Generation HEXFET IR HEXFET (4th generation)
Drain-to-Source Voltage (VDS) 30 V -30 V
Continuous Drain Current N-channel (ID) 6.5 A —
Continuous Drain Current P-channel (ID) 4.9 A —
RDS(on) Max N-channel 29 mOhm (per Infineon product page) —
RDS(on) Max P-channel [DATA_NEEDED: P-channel RDS(on) max] —
Total Power Dissipation (PD) 2 W —
Thermal Resistance Junction-to-Ambient N-ch 120 C/W (steady state) —
Thermal Resistance Junction-to-Ambient P-ch 110 C/W (steady state) —
Package Type 8-SOIC (SO-8) —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Lead-Free / RoHS Yes (PBF suffix = Pb-free) —
Packaging Tape & Reel (TR suffix) Tape & Reel (TR suffix)
Configuration N-Channel + P-Channel (complementary half-bridge) —
FET Type — P-Channel MOSFET
Continuous Drain Current (ID) at TA=25°C — -4.6 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=-10V — 70 mΩ
On-Resistance RDS(on) max @ VGS=-4.5V — 130 mΩ
Gate Threshold Voltage VGS(th) — -1.0 V to -3.0 V
Total Gate Charge Qg — 27 nC
Dissipasi Listrik (TC=25°C) — 2.5 W
Suhu Hubung Kerja — -55 °C to +150 °C
Paket — SO-8 (8-SO)
RoHS / Lead-Free — Lead-Free (PBF suffix), RoHS compliant

Spek dan Sumber

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