IRF7389PBF vs IRF7341GTRPBF Comparison

Detailed side-by-side comparison of IRF7389PBF by Infineon and IRF7341GTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF7389PBF IRF7341GTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.76
Configuration N and P-Channel (complementary half-bridge) Dual N-Channel
Drain-to-Source Voltage N-Ch (V_DSS) 30 V β€”
Drain-to-Source Voltage P-Ch (V_DSS) -30 V β€”
Continuous Drain Current N-Ch (I_D) 7.3 A β€”
Continuous Drain Current P-Ch (I_D) -5.3 A β€”
On-Resistance N-Ch R_DS(on) max 0.029 ohm at V_GS=10V β€”
On-Resistance P-Ch R_DS(on) max 0.058 ohm at V_GS=10V β€”
Total Gate Charge N-Ch (Q_g) typical 22 nC β€”
Total Gate Charge P-Ch (Q_g) typical 23 nC β€”
Power Dissipation (P_D) 2.5 W β€”
Technology Generation V HEXFET IR HEXFET Planar MOSFET
Package SO-8 (SOIC-8) surface mount 8-SO (SOIC-8)
Pinout Industry-standard complementary SO-8 β€”
Operating Temperature Range [DATA_NEEDED: full operating temperature range] -55 C to +175 C
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Lead-Free Yes Yes (PBF suffix)
Halogen-Free Yes β€”
Avalanche Rated Yes (fully avalanche rated) β€”
Drain-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) β€” 5.1 A
On-Resistance (RDS(on)) max β€” 50 mOhm at VGS=10V
Power Dissipation (PD) β€” 2.4 W
Maximum Junction Temperature β€” 175 C
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: typical VGS(th) value]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss typical]
Output Capacitance (Coss) β€” [DATA_NEEDED: Coss typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]

Datasheets & Resources

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