IRF7389PBF vs IRF7341GTRPBF 比較
詳細並排比較 IRF7389PBF 由 Infineon 與 IRF7341GTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF7389PBF | IRF7341GTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Configuration | N and P-Channel (complementary half-bridge) | Dual N-Channel |
| Drain-to-Source Voltage N-Ch (V_DSS) | 30 V | — |
| Drain-to-Source Voltage P-Ch (V_DSS) | -30 V | — |
| Continuous Drain Current N-Ch (I_D) | 7.3 A | — |
| Continuous Drain Current P-Ch (I_D) | -5.3 A | — |
| On-Resistance N-Ch R_DS(on) max | 0.029 ohm at V_GS=10V | — |
| On-Resistance P-Ch R_DS(on) max | 0.058 ohm at V_GS=10V | — |
| Total Gate Charge N-Ch (Q_g) typical | 22 nC | — |
| Total Gate Charge P-Ch (Q_g) typical | 23 nC | — |
| Power Dissipation (P_D) | 2.5 W | — |
| Technology | Generation V HEXFET | IR HEXFET Planar MOSFET |
| 封裝 | SO-8 (SOIC-8) surface mount | 8-SO (SOIC-8) |
| Pinout | Industry-standard complementary SO-8 | — |
| 工作溫度範圍 | [DATA_NEEDED: full operating temperature range] | -55 C to +175 C |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | Yes (PBF suffix) |
| 無鹵素 | Yes | — |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 5.1 A |
| On-Resistance (RDS(on)) max | — | 50 mOhm at VGS=10V |
| Power Dissipation (PD) | — | 2.4 W |
| Maximum Junction Temperature | — | 175 C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |