IRF7389PBF vs IRF7341GTRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7389PBF sa pamamagitan ng Infineon at IRF7341GTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7389PBF IRF7341GTRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Configuration N and P-Channel (complementary half-bridge) Dual N-Channel
Drain-to-Source Voltage N-Ch (V_DSS) 30 V —
Drain-to-Source Voltage P-Ch (V_DSS) -30 V —
Continuous Drain Current N-Ch (I_D) 7.3 A —
Continuous Drain Current P-Ch (I_D) -5.3 A —
On-Resistance N-Ch R_DS(on) max 0.029 ohm at V_GS=10V —
On-Resistance P-Ch R_DS(on) max 0.058 ohm at V_GS=10V —
Total Gate Charge N-Ch (Q_g) typical 22 nC —
Total Gate Charge P-Ch (Q_g) typical 23 nC —
Power Dissipation (P_D) 2.5 W —
Technology Generation V HEXFET IR HEXFET Planar MOSFET
Packhaging SO-8 (SOIC-8) surface mount 8-SO (SOIC-8)
Pinout Industry-standard complementary SO-8 —
Hanay ng Temperature na Operasyon [DATA_NEEDED: full operating temperature range] -55 C to +175 C
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes (PBF suffix)
Wala sa Halogen Yes —
Avalanche Rated Yes (fully avalanche rated) —
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) — 5.1 A
On-Resistance (RDS(on)) max — 50 mOhm at VGS=10V
Power Dissipation (PD) — 2.4 W
Maximum Junction Temperature — 175 C
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Output Capacitance (Coss) — [DATA_NEEDED: Coss typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]

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