IRF7389PBF vs IRF7341GTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7389PBF disebabkan oleh Infineon dan IRF7341GTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7389PBF IRF7341GTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Configuration N and P-Channel (complementary half-bridge) Dual N-Channel
Drain-to-Source Voltage N-Ch (V_DSS) 30 V —
Drain-to-Source Voltage P-Ch (V_DSS) -30 V —
Continuous Drain Current N-Ch (I_D) 7.3 A —
Continuous Drain Current P-Ch (I_D) -5.3 A —
On-Resistance N-Ch R_DS(on) max 0.029 ohm at V_GS=10V —
On-Resistance P-Ch R_DS(on) max 0.058 ohm at V_GS=10V —
Total Gate Charge N-Ch (Q_g) typical 22 nC —
Total Gate Charge P-Ch (Q_g) typical 23 nC —
Power Dissipation (P_D) 2.5 W —
Technology Generation V HEXFET IR HEXFET Planar MOSFET
Kemasan SO-8 (SOIC-8) surface mount 8-SO (SOIC-8)
Pinout Industry-standard complementary SO-8 —
Gambaran Suhu Operasi [DATA_NEEDED: full operating temperature range] -55 C to +175 C
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Lead-Free Yes Yes (PBF suffix)
Boson Bebas Yes —
Avalanche Rated Yes (fully avalanche rated) —
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) — 5.1 A
On-Resistance (RDS(on)) max — 50 mOhm at VGS=10V
Power Dissipation (PD) — 2.4 W
Maximum Junction Temperature — 175 C
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Output Capacitance (Coss) — [DATA_NEEDED: Coss typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]

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