IRF7389TRPBF vs IRF7343TRPBF 比較
詳細並排比較 IRF7389TRPBF 由 Infineon 與 IRF7343TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF7389TRPBF | IRF7343TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Transistor Polarity | N and P Channel | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (N-Ch, Id) | 7.3 A | — |
| Continuous Drain Current (P-Ch, Id) | -5.3 A | — |
| On-Resistance RDS(on) Max | 29 mOhm | — |
| Power Dissipation (Pd) | 2.5 W | — |
| Configuration | Dual N+P Complementary Half-Bridge | — |
| Technology | HEXFET Generation V (IR MOSFET) | IR MOSFET (HEXFET Generation V) |
| 封裝 | 8-SO (SOIC-8) | 8-SOIC (SO-8) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +150C | — |
| Avalanche Rated | Yes | — |
| Lead Free / RoHS | Lead Free / RoHS Compliant | — |
| MSL 等級 | 1 | — |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Status | — | Active |
| 電晶體類型 | — | N and P-Channel Complementary MOSFET Array |
| Drain-to-Source Voltage (VDS) - N-Channel | — | 55 V |
| Drain-to-Source Voltage (VDS) - P-Channel | — | 55 V |
| Continuous Drain Current (ID) - N-Channel | — | 4.7 A |
| Continuous Drain Current (ID) - P-Channel | — | 3.4 A |
| On-Resistance (RDS(on)) - N-Channel | — | 0.043 ohm (typical per chipdig.com) |
| On-Resistance (RDS(on)) max | — | 50 mOhm |
| Power Dissipation (PD) | — | 2 W |
| Lead-Free | — | Yes |
| RoHS Compliance | — | Compliant |