IRF7495TRPBF vs IRF7854TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF7495TRPBF sa pamamagitan ng Infineon at IRF7854TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF7495TRPBF | IRF7854TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $0.48 |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | IR MOSFET (HEXFET) | HEXFET (planar N-channel) |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at TA=25 C | 7.3 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 22 mOhm | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Total Gate Charge (Qg) Typ | 34 nC at 10 V | — |
| Input Capacitance (Ciss) Max | 1530 pF at 25 V | — |
| Power Dissipation (PD) Max at TA=25 C | 2.5 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (TJ) | -55°C to +150°C (TJ) |
| Packhaging | 8-SOIC (SO-8) | SO-8 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (unlimited) | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Estimated EOL Date | 2027 | — |
| ECCN | EAR99 | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 10 A |
| Power Dissipation (PD) at Ta=25°C | — | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | — | 13.4 mΩ |
| Gate-Source Threshold Voltage VGS(th) max | — | 4.9 V |
| Total Gate Charge Qg | — | 27 nC |
| Lead-Free / RoHS | — | Yes (PBF suffix, lead-free) |
| Qualification | — | JEDEC industrial, Normal level |
| Solder Process | — | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | — | 10 V |