IRF7907TRPBF vs IRF7342TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7907TRPBF disebabkan oleh Infineon dan IRF7342TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7907TRPBF IRF7342TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Configuration Dual N-Channel MOSFET Array Dual P-Channel MOSFET Array (two independent P-FETs in one package)
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) Max 9.1 A per channel at 25 C —
Pulsed Drain Current (IDM) Max 11 A —
On-Resistance (RDS(on)) Max 11.8 mOhm at VGS = 10 V —
Gate-Source Threshold Voltage (VGS(th)) 1.35 V (typ) —
Total Power Dissipation (PD) Max 2 W —
Gambaran Suhu Operasi -55 C to +150 C -55 C to +150 C (Tj)
Kemasan 8-SOIC (SO-8) 8-SOIC (SO-8), surface mount
Jenis Pemasangan Surface Mount Surface Mount
Technology IR MOSFET (Infineon hexfet-style trench) HEXFET Power MOSFET (Fifth Generation), P-Channel
Lead-Free Status Yes (PBF suffix) —
Packaging Tape & Reel (TR) Tape and Reel (TR)
Status RoHS Compliant —
Channel Polarity N-Channel (both) —
Part Number — IRF7342TRPBF
Manufacturer — Infineon Technologies (formerly International Rectifier)
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) — -3.4 A at 25 C
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (Vgs(th)) — -1.0 V to -3.0 V (typ -1.7 V)
Drain-Source On-Resistance (RDS(on)) — 0.105 ohm max at VGS = -10 V
Maximum Power Dissumption (Pd) — 2 W
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free, RoHS compliant)
Channel Type — P-Channel (enhancement mode)
Number of Channels — 2 (dual array)

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