IRF7907TRPBF vs IRF7342TRPBF 比較

詳細並排比較 IRF7907TRPBF 由 Infineon 與 IRF7342TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF7907TRPBF IRF7342TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Configuration Dual N-Channel MOSFET Array Dual P-Channel MOSFET Array (two independent P-FETs in one package)
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) Max 9.1 A per channel at 25 C —
Pulsed Drain Current (IDM) Max 11 A —
On-Resistance (RDS(on)) Max 11.8 mOhm at VGS = 10 V —
Gate-Source Threshold Voltage (VGS(th)) 1.35 V (typ) —
Total Power Dissipation (PD) Max 2 W —
工作溫度範圍 -55 C to +150 C -55 C to +150 C (Tj)
封裝 8-SOIC (SO-8) 8-SOIC (SO-8), surface mount
安裝類型 Surface Mount Surface Mount
Technology IR MOSFET (Infineon hexfet-style trench) HEXFET Power MOSFET (Fifth Generation), P-Channel
Lead-Free Status Yes (PBF suffix) —
Packaging Tape & Reel (TR) Tape and Reel (TR)
RoHS 狀態 Compliant —
Channel Polarity N-Channel (both) —
Part Number — IRF7342TRPBF
Manufacturer — Infineon Technologies (formerly International Rectifier)
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) — -3.4 A at 25 C
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (Vgs(th)) — -1.0 V to -3.0 V (typ -1.7 V)
Drain-Source On-Resistance (RDS(on)) — 0.105 ohm max at VGS = -10 V
Maximum Power Dissumption (Pd) — 2 W
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free, RoHS compliant)
Channel Type — P-Channel (enhancement mode)
Number of Channels — 2 (dual array)

資料表與資源

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