IRFB4410PBF vs IRF1407PBF तुलना
विस्तृत दोनों ओर की तुलना IRFB4410PBF द्वारा Infineon और IRF1407PBF द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IRFB4410PBF | IRF1407PBF |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) - HEXFET | HEXFET (stripe-planar MOSFET) |
| Drain-to-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) @ 25C | 88 A (Tc) | — |
| Continuous Drain Current (Id) @ 100C | [DATA_NEEDED: Id @ 100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm pulse] | — |
| Gate-to-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| RDS(on) max @ VGS=10V | 10 mOhm | — |
| Total Gate Charge (Qg) | 120 nC | — |
| Power Dissipation (Pd) | 200 W (Tc) | — |
| ऑपरेटिंग तापमान रेंज | -55C to +175C (Tj) | -55 C to +175 C |
| पैकेज | TO-220AB (through-hole) | TO-220AB (through-hole, 3 leads) |
| माउंटिंग प्रकार | Through Hole | Through Hole |
| Avalanche Energy Rating | Single-pulse avalanche rated | — |
| MSL स्तर | 1 (unlimited) | — |
| RoHS स्थिति | Compliant (Pb-free PBF suffix) | — |
| Series | HEXFET | — |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 130 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC=25C | — | 330 W |
| On-Resistance RDS(on) at VGS=10V | — | 7.8 mOhm (typical) |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS threshold typical/min/max] |
| Gate Charge (Qg) | — | 160 nC (typical) |
| Maximum Junction Temperature | — | 175 C |
| Lead-Free / RoHS | — | Lead-free, RoHS compliant (PBF suffix) |
| Avalanche Rating | — | Repetitive avalanche rated |