IRFB4410PBF vs IRF1407PBF مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ IRFB4410PBF بواسطة Infineon و IRF1407PBF بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | IRFB4410PBF | IRF1407PBF |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | نشط |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) - HEXFET | HEXFET (stripe-planar MOSFET) |
| Drain-to-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) @ 25C | 88 A (Tc) | — |
| Continuous Drain Current (Id) @ 100C | [DATA_NEEDED: Id @ 100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm pulse] | — |
| Gate-to-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| RDS(on) max @ VGS=10V | 10 mOhm | — |
| Total Gate Charge (Qg) | 120 nC | — |
| Power Dissipation (Pd) | 200 W (Tc) | — |
| نطاق درجة حرارة التشغيل | -55C to +175C (Tj) | -55 C to +175 C |
| العلبة | TO-220AB (through-hole) | TO-220AB (through-hole, 3 leads) |
| نوع التركيب | Through Hole | Through Hole |
| Avalanche Energy Rating | Single-pulse avalanche rated | — |
| مستوى MSL | 1 (unlimited) | — |
| حالة RoHS | Compliant (Pb-free PBF suffix) | — |
| Series | HEXFET | — |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 130 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC=25C | — | 330 W |
| On-Resistance RDS(on) at VGS=10V | — | 7.8 mOhm (typical) |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS threshold typical/min/max] |
| Gate Charge (Qg) | — | 160 nC (typical) |
| Maximum Junction Temperature | — | 175 C |
| Lead-Free / RoHS | — | Lead-free, RoHS compliant (PBF suffix) |
| Avalanche Rating | — | Repetitive avalanche rated |