IRFH5015TRPBF vs BSC0901NSIATMA1 Comparison

Detailed side-by-side comparison of IRFH5015TRPBF by Infineon and BSC0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFH5015TRPBF

IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon

IRFH5015TRPBF βœ“ Active
Infineon
BSC0901NSIATMA1

BSC0901NSIATMA1 - 30V 100A OptiMOS N-Ch MOSFET | Infineon

BSC0901NSIATMA1 βœ“ Active

Specification Comparison

Parameter IRFH5015TRPBF BSC0901NSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.38
FET Type N-Channel β€”
Technology IR MOSFET (HEXFET) OptiMOS 25V N-Channel Power MOSFET
Drain-Source Voltage (VDS) 150 V 30 V
Continuous Drain Current (ID) at TA=25C 10 A β€”
Continuous Drain Current (ID) at TC=25C 56 A β€”
On-Resistance (RDS(on)) max 31 mOhm β€”
Total Gate Charge (Qg) 33 nC [DATA_NEEDED: total gate charge nC]
Power Dissipation (TA=25C) 3.6 W β€”
Power Dissipation (TC=25C) 156 W β€”
Gate Drive Voltage (VGS recommended) 10 V β€”
Package 8-PQFN (5x6) SuperSO8 PG-TDSON-8-6 (5x6 mm with exposed pad)
Mounting Type Surface Mount Surface Mount
Configuration Single with built-in body diode β€”
Operating Temperature -55C to +150C (TJ max) β€”
RoHS Status Compliant Compliant
Continuous Drain Current (ID) at Ta=25C β€” 28 A
Continuous Drain Current (ID) at Tc β€” 100 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-State Resistance (RDS(on)) at VGS=10V β€” 2.0 mOhm typical
On-State Resistance (RDS(on)) at VGS=4.5V β€” [DATA_NEEDED: RDS(on) at 4.5V]
Gate-Source Threshold Voltage (VGS(th)) β€” 2.2 V max
Power Dissipation (PD) at Ta=25C β€” 2.5 W
Power Dissipation (PD) at Tc β€” 69 W
Operating Temperature Range β€” -55 C to +150 C
Pin Count β€” 8
MSL Level β€” 1
Halogen-Free β€” Yes

Datasheets & Resources

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