IRFH8201TRPBF vs IRLH5030TRPBF Comparison
Detailed side-by-side comparison of IRFH8201TRPBF by Infineon and IRLH5030TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFH8201TRPBF | IRLH5030TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET (trench MOSFET) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA=25C | 49 A | 13 A |
| Continuous Drain Current (ID) at TC=25C | 100 A | 100 A |
| Pulsed Drain Current (IDM) | 324 A | — |
| RDS(on) max at VGS=10V | 0.95 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 1.35 V max | — |
| Total Gate Charge (Qg) | 56 nC at VGS=10V | 44 nC |
| Output Capacitance (Coss) | 7.33 nF | — |
| Reverse Transfer Capacitance (Crss) | 850 pF | — |
| Power Dissipation (TA) | 3.6 W | — |
| Power Dissipation (TC) | 156 W | — |
| Operating Temperature Range | -55C to +150C | — |
| Package | SuperSO8 5x6 (PQFN-8) with exposed pad | PQFN-8 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | — |
| RoHS Status | Compliant | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLH5030TRPBF |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| On-Resistance RDS(on) max at VGS=10V | — | 9 mOhm |
| Gate Drive Voltage (optimized) | — | 10 V (capable of 4.5 V) |
| Power Dissipation at TA=25C | — | 3.6 W |
| Power Dissipation at TC=25C | — | 156 W |
| Thermal Resistance to PCB (RthJC) | — | 0.8 C/W |
| Profile Height | — | ≤ 0.9 mm |
| Qualification | — | JEDEC standard |
| Rg Tested | — | 100% |
| RoHS Compliance | — | Compliant (Lead-free, Bromide-free, Halogen-free) |
| Industry-Standard Pinout | — | Yes |