IRFH8201TRPBF vs IRLH5030TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFH8201TRPBF sa pamamagitan ng Infineon at IRLH5030TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFH8201TRPBF IRLH5030TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Technology StrongIRFET (trench MOSFET) IR MOSFET (HEXFET)
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) at TA=25C 49 A 13 A
Continuous Drain Current (ID) at TC=25C 100 A 100 A
Pulsed Drain Current (IDM) 324 A —
RDS(on) max at VGS=10V 0.95 mOhm —
Gate Threshold Voltage (VGS(th)) 1.35 V max —
Total Gate Charge (Qg) 56 nC at VGS=10V 44 nC
Output Capacitance (Coss) 7.33 nF —
Reverse Transfer Capacitance (Crss) 850 pF —
Power Dissipation (TA) 3.6 W —
Power Dissipation (TC) 156 W —
Hanay ng Temperature na Operasyon -55C to +150C —
Packhaging SuperSO8 5x6 (PQFN-8) with exposed pad PQFN-8 (SuperSO8 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL [DATA_NEEDED: MSL level] —
Tindminan RoHS Compliant —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLH5030TRPBF
Drain-to-Source Voltage (VDS) — 100 V
On-Resistance RDS(on) max at VGS=10V — 9 mOhm
Gate Drive Voltage (optimized) — 10 V (capable of 4.5 V)
Power Dissipation at TA=25C — 3.6 W
Power Dissipation at TC=25C — 156 W
Thermal Resistance to PCB (RthJC) — 0.8 C/W
Profile Height — ≤ 0.9 mm
Qualification — JEDEC standard
Rg Tested — 100%
RoHS Compliance — Compliant (Lead-free, Bromide-free, Halogen-free)
Industry-Standard Pinout — Yes

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