IRFH8201TRPBF vs IRLH5030TRPBF Perbandingan
Perbandingan bersamaan detil IRFH8201TRPBF dari Infineon dan IRLH5030TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFH8201TRPBF | IRLH5030TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET (trench MOSFET) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA=25C | 49 A | 13 A |
| Continuous Drain Current (ID) at TC=25C | 100 A | 100 A |
| Pulsed Drain Current (IDM) | 324 A | — |
| RDS(on) max at VGS=10V | 0.95 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 1.35 V max | — |
| Total Gate Charge (Qg) | 56 nC at VGS=10V | 44 nC |
| Output Capacitance (Coss) | 7.33 nF | — |
| Reverse Transfer Capacitance (Crss) | 850 pF | — |
| Power Dissipation (TA) | 3.6 W | — |
| Power Dissipation (TC) | 156 W | — |
| Rentang Suhu Kerja | -55C to +150C | — |
| Paket | SuperSO8 5x6 (PQFN-8) with exposed pad | PQFN-8 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | [DATA_NEEDED: MSL level] | — |
| Status RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLH5030TRPBF |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| On-Resistance RDS(on) max at VGS=10V | — | 9 mOhm |
| Gate Drive Voltage (optimized) | — | 10 V (capable of 4.5 V) |
| Power Dissipation at TA=25C | — | 3.6 W |
| Power Dissipation at TC=25C | — | 156 W |
| Thermal Resistance to PCB (RthJC) | — | 0.8 C/W |
| Profile Height | — | ≤ 0.9 mm |
| Qualification | — | JEDEC standard |
| Rg Tested | — | 100% |
| RoHS Compliance | — | Compliant (Lead-free, Bromide-free, Halogen-free) |
| Industry-Standard Pinout | — | Yes |