IRFH8318TRPBF vs IQDH35N03LM5CGATMA1 Comparison

Detailed side-by-side comparison of IRFH8318TRPBF by Infineon and IQDH35N03LM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFH8318TRPBF

IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon

IRFH8318TRPBF ✓ Active
Infineon
IQDH35N03LM5CGATMA1

IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΩ N-Channel MOSFET | Infineon

IQDH35N03LM5CGATMA1 ✓ Active

Specification Comparison

Parameter IRFH8318TRPBF IQDH35N03LM5CGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $1.45
Manufacturer Infineon Technologies
Part Number IRFH8318TRPBF
Technology StrongIRFET™ (N-Channel Trench MOSFET) OptiMOS 5 trench MOSFET
Drain-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) at Ta=25°C 27 A
Continuous Drain Current (ID) at Tc=25°C 120 A
On-Resistance RDS(on) max at VGS=10V 3.1 mΩ
Total Gate Charge (Qg) 41 nC
Power Dissipation (Ta) 3.6 W
Power Dissipation (Tc) 59 W
Package PQFN 5x6 (SuperSO8, 8-PowerTDFN) PG-TTFN-9-U02 (PQFN 5x6 mm²)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55°C to +150°C
RoHS Status Compliant Compliant
Lead-Free Yes
MSL Level 1 1
Description Synchronous MOSFET for high-frequency buck converters
Drain-to-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) at Ta 66 A
Pulsed Drain Current (IDM) at Tc 700 A
Gate-to-Source Voltage (VGS) max ±20 V
Static Drain-to-Source On-Resistance (RDS(on)) 0.35 mΩ (typical at VGS=10 V)
Power Dissipation (PD) at Ta 2.5 W
Power Dissipation (PD) at Tc 278 W
Operating Temperature Range -55 °C to +175 °C
Halogen-Free Yes
Channel Type N-Channel

Datasheets & Resources

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