IRFH8318TRPBF vs IQDH35N03LM5CGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH8318TRPBF disebabkan oleh Infineon dan IQDH35N03LM5CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΩ N-Channel MOSFET | Infineon
IQDH35N03LM5CGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IRFH8318TRPBF | IQDH35N03LM5CGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFH8318TRPBF | — |
| Technology | StrongIRFET™ (N-Channel Trench MOSFET) | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 27 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 120 A | — |
| On-Resistance RDS(on) max at VGS=10V | 3.1 mΩ | — |
| Total Gate Charge (Qg) | 41 nC | — |
| Power Dissipation (Ta) | 3.6 W | — |
| Power Dissipation (Tc) | 59 W | — |
| Kemasan | PQFN 5x6 (SuperSO8, 8-PowerTDFN) | PG-TTFN-9-U02 (PQFN 5x6 mm²) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55°C to +150°C | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Aras MSL | 1 | 1 |
| Description | Synchronous MOSFET for high-frequency buck converters | — |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 0.35 mΩ (typical at VGS=10 V) |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C |
| Boson Bebas | — | Yes |
| Channel Type | — | N-Channel |