IRFH8318TRPBF vs IRFH7084TRPBF Comparison

Detailed side-by-side comparison of IRFH8318TRPBF by Infineon and IRFH7084TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFH8318TRPBF IRFH7084TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Part Number IRFH8318TRPBF —
Technology StrongIRFET™ (N-Channel Trench MOSFET) StrongIRFET™ (trench MOSFET)
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at Ta=25°C 27 A —
Continuous Drain Current (ID) at Tc=25°C 120 A —
On-Resistance RDS(on) max at VGS=10V 3.1 mΩ —
Total Gate Charge (Qg) 41 nC —
Power Dissipation (Ta) 3.6 W —
Power Dissipation (Tc) 59 W —
Package PQFN 5x6 (SuperSO8, 8-PowerTDFN) 8-PQFN 5x6 mm (SuperSO8)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55°C to +150°C —
RoHS Status Compliant Compliant
Lead-Free Yes —
MSL Level 1 1
Description Synchronous MOSFET for high-frequency buck converters —
FET Type — N-Channel
Continuous Drain Current (ID, Tc=25°C, package-limited) — 100 A
Silicon-Limited Drain Current — 265 A
Power Dissipation (PD, Tc=25°C) — 156 W
On-Resistance RDS(on) max @ VGS=10V — 1.25 mΩ
On-Resistance RDS(on) typ @ VGS=10V — 0.95 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) typ — 1.7 V to 2.7 V
Input Capacitance (Ciss) max @ 25V — 6560 pF
Operating Temperature Range — -55°C to +175°C (TJ)
Halogen Free — Compliant
RthJC max — 0.96 °C/W (per datasheet)

Datasheets & Resources

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