IRFH8318TRPBF vs IRFH7084TRPBF 比較

詳細並排比較 IRFH8318TRPBF 由 Infineon 與 IRFH7084TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFH8318TRPBF IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon

IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon

IRFH8318TRPBF ✓ 啟用中
Infineon
IRFH7084TRPBF IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF ✓ 啟用中

規格比較

參數 IRFH8318TRPBF IRFH7084TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number IRFH8318TRPBF —
Technology StrongIRFET™ (N-Channel Trench MOSFET) StrongIRFET™ (trench MOSFET)
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at Ta=25°C 27 A —
Continuous Drain Current (ID) at Tc=25°C 120 A —
On-Resistance RDS(on) max at VGS=10V 3.1 mΩ —
Total Gate Charge (Qg) 41 nC —
Power Dissipation (Ta) 3.6 W —
Power Dissipation (Tc) 59 W —
封裝 PQFN 5x6 (SuperSO8, 8-PowerTDFN) 8-PQFN 5x6 mm (SuperSO8)
安裝類型 Surface Mount Surface Mount
工作溫度 -55°C to +150°C —
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
MSL 等級 1 1
Description Synchronous MOSFET for high-frequency buck converters —
FET Type — N-Channel
Continuous Drain Current (ID, Tc=25°C, package-limited) — 100 A
Silicon-Limited Drain Current — 265 A
Power Dissipation (PD, Tc=25°C) — 156 W
On-Resistance RDS(on) max @ VGS=10V — 1.25 mΩ
On-Resistance RDS(on) typ @ VGS=10V — 0.95 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) typ — 1.7 V to 2.7 V
Input Capacitance (Ciss) max @ 25V — 6560 pF
工作溫度範圍 — -55°C to +175°C (TJ)
無鹵素 — Compliant
RthJC max — 0.96 °C/W (per datasheet)

資料表與資源

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