IRFML8244TRPBF vs IRLML2060TRPBF Comparison

Detailed side-by-side comparison of IRFML8244TRPBF by Infineon and IRLML2060TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFML8244TRPBF IRLML2060TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET —
Technology IR MOSFET (HEXFET) IR HEXFET (Trench Gate)
Drain-to-Source Voltage (VDS) 25 V 60 V
Continuous Drain Current (ID) 5.8 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 4.8 A
Gate-to-Source Voltage (VGS) max +/- 20 V +/- 12 V
RDS(on) max @ VGS=10V 24 mOhm —
RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Total Gate Charge (Qg) 5.4 nC —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] 1.8 V typical
Power Dissipation (PD) max 1.25 W (Ta) —
Operating Temperature Range -55 C to +150 C (junction) —
Package SOT-23-3 (TO-236-3, SC-59) SOT-23 (Micro3, 3-pin)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 MSL1
Pin Configuration Industry-standard SOT-23 pinout (G-D-S) —
RoHS Status Compliant (Pb-free, halogen-free) Compliant
Qualification Consumer grade —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 1.2 A
RDS(on) max at VGS=10V — 480 mOhm
RDS(on) max at VGS=4.5V — 650 mOhm (typical 580 mOhm)
Power Dissipation (PD) at TA=25C — 1.25 W
Thermal Resistance Junction-to-Ambient (RthetaJA) — 100 C/W
Operating Junction Temperature — -55C to +150C
Halogen Free — Yes

Datasheets & Resources

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