IRFML8244TRPBF vs IRLTS2242TRPBF Comparison

Detailed side-by-side comparison of IRFML8244TRPBF by Infineon and IRLTS2242TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFML8244TRPBF IRLTS2242TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET —
Technology IR MOSFET (HEXFET) IR MOSFET (HEXFET)
Drain-to-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) 5.8 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) max +/- 20 V —
RDS(on) max @ VGS=10V 24 mOhm —
RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Total Gate Charge (Qg) 5.4 nC —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] [DATA_NEEDED: VGS(th) typ/min/max]
Power Dissipation (PD) max 1.25 W (Ta) —
Operating Temperature Range -55 C to +150 C (junction) -55C to +150C (junction)
Package SOT-23-3 (TO-236-3, SC-59) TSOP-6 (Micro 6)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 MSL1 (per JEDEC J-STD-020)
Pin Configuration Industry-standard SOT-23 pinout (G-D-S) —
RoHS Status Compliant (Pb-free, halogen-free) Compliant
Qualification Consumer grade —
Polarity — P-Channel
Drain-Source Voltage (VDS) — -20 V
Continuous Drain Current (ID) at TA=25C — -6.9 A
Power Dissipation (PD) at TA=25C — 2.0 W
On-Resistance RDS(on) max at VGS=-10V — 32 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS absolute max]
Gate Drive Voltage (logic level) — 4.5 V (fully enhanced), 2.5 V capable
Package Thermal Resistance (RthJA) — [DATA_NEEDED: RthJA on 1 inch FR-4 PCB]
Lead-Free — Yes
Halogen Free — Yes

Datasheets & Resources

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