IRFML8244TRPBF vs IRLTS2242TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFML8244TRPBF disebabkan oleh Infineon dan IRLTS2242TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFML8244TRPBF IRLTS2242TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Technology IR MOSFET (HEXFET) IR MOSFET (HEXFET)
Drain-to-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) 5.8 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) max +/- 20 V —
RDS(on) max @ VGS=10V 24 mOhm —
RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Total Gate Charge (Qg) 5.4 nC —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] [DATA_NEEDED: VGS(th) typ/min/max]
Power Dissipation (PD) max 1.25 W (Ta) —
Gambaran Suhu Operasi -55 C to +150 C (junction) -55C to +150C (junction)
Kemasan SOT-23-3 (TO-236-3, SC-59) TSOP-6 (Micro 6)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 MSL1 (per JEDEC J-STD-020)
Pin Configuration Industry-standard SOT-23 pinout (G-D-S) —
Status RoHS Compliant (Pb-free, halogen-free) Compliant
Qualification Consumer grade —
Polarity — P-Channel
Drain-Source Voltage (VDS) — -20 V
Continuous Drain Current (ID) at TA=25C — -6.9 A
Power Dissipation (PD) at TA=25C — 2.0 W
On-Resistance RDS(on) max at VGS=-10V — 32 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS absolute max]
Gate Drive Voltage (logic level) — 4.5 V (fully enhanced), 2.5 V capable
Package Thermal Resistance (RthJA) — [DATA_NEEDED: RthJA on 1 inch FR-4 PCB]
Lead-Free — Yes
Boson Bebas — Yes

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