IRFML8244TRPBF vs IRLTS2242TRPBF Perbandingan

Perbandingan bersamaan detil IRFML8244TRPBF dari Infineon dan IRLTS2242TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFML8244TRPBF IRLTS2242TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Technology IR MOSFET (HEXFET) IR MOSFET (HEXFET)
Drain-to-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) 5.8 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) max +/- 20 V —
RDS(on) max @ VGS=10V 24 mOhm —
RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Total Gate Charge (Qg) 5.4 nC —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] [DATA_NEEDED: VGS(th) typ/min/max]
Power Dissipation (PD) max 1.25 W (Ta) —
Rentang Suhu Kerja -55 C to +150 C (junction) -55C to +150C (junction)
Paket SOT-23-3 (TO-236-3, SC-59) TSOP-6 (Micro 6)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 MSL1 (per JEDEC J-STD-020)
Pin Configuration Industry-standard SOT-23 pinout (G-D-S) —
Status RoHS Compliant (Pb-free, halogen-free) Compliant
Qualification Consumer grade —
Polarity — P-Channel
Drain-Source Voltage (VDS) — -20 V
Continuous Drain Current (ID) at TA=25C — -6.9 A
Power Dissipation (PD) at TA=25C — 2.0 W
On-Resistance RDS(on) max at VGS=-10V — 32 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS absolute max]
Gate Drive Voltage (logic level) — 4.5 V (fully enhanced), 2.5 V capable
Package Thermal Resistance (RthJA) — [DATA_NEEDED: RthJA on 1 inch FR-4 PCB]
Lead-Free — Yes
Bebas Halogen — Yes

Spek dan Sumber

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