IRFP3710PBF vs IRFB3207ZPBF Comparison

Detailed side-by-side comparison of IRFP3710PBF by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFP3710PBF IRFB3207ZPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.86 $1.62
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Series HEXFET, Fifth Generation HEXFET
FET Type N-Channel β€”
Drain-to-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) 57 A (Tc) β€”
Power Dissipation (PD) 200 W (Tc) β€”
On-Resistance RDS(on) Max 25 mOhm at VGS = 10 V β€”
Gate Charge (Qg) Typical 66.7 nC β€”
Gate-to-Source Voltage Max Β±20 V β€”
Operating Temperature Range -55C to +175C (Tj) β€”
Package TO-247AC (3-pin + tab) TO-220AB (3-lead through-hole)
Mounting Type Through Hole Through Hole
Avalanche Rating Fully Avalanche Rated β€”
dv/dt Rating Dynamic dv/dt Rated β€”
Lead-Free Yes β€”
RoHS Status Compliant β€”
Technology IR MOSFET (HEXFET) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Part Number β€” IRFB3207ZPBF
Drain-Source Voltage (VDS) β€” 75 V
Continuous Drain Current (ID) at TC=25C β€” 120 A
Silicon-Limited Drain Current β€” 170 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V β€” 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V β€” 4.1 mOhm
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg β€” [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C β€” 300 W
Operating Junction Temperature β€” -55 C to +175 C
Lead-Free / RoHS β€” Yes (PBF suffix = lead-free)
MSL Level β€” N/A (through-hole)
Avalanche Rated β€” Yes (improved Z-variant ruggedness)

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