IRFP3710PBF vs IRFB3207ZPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFP3710PBF disebabkan oleh Infineon dan IRFB3207ZPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFP3710PBF IRFB3207ZPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Series HEXFET, Fifth Generation HEXFET
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 57 A (Tc) —
Power Dissipation (PD) 200 W (Tc) —
On-Resistance RDS(on) Max 25 mOhm at VGS = 10 V —
Gate Charge (Qg) Typical 66.7 nC —
Gate-to-Source Voltage Max ±20 V —
Gambaran Suhu Operasi -55C to +175C (Tj) —
Kemasan TO-247AC (3-pin + tab) TO-220AB (3-lead through-hole)
Jenis Pemasangan Through Hole Through Hole
Avalanche Rating Fully Avalanche Rated —
dv/dt Rating Dynamic dv/dt Rated —
Lead-Free Yes —
Status RoHS Compliant —
Technology IR MOSFET (HEXFET) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Part Number — IRFB3207ZPBF
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Suhu Hubungan Operasi — -55 C to +175 C
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Aras MSL — N/A (through-hole)
Avalanche Rated — Yes (improved Z-variant ruggedness)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga