IRFP3710PBF vs IRFB3207ZPBF Perbandingan

Perbandingan bersamaan detil IRFP3710PBF dari Infineon dan IRFB3207ZPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFP3710PBF IRFB3207ZPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Series HEXFET, Fifth Generation HEXFET
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 57 A (Tc) —
Power Dissipation (PD) 200 W (Tc) —
On-Resistance RDS(on) Max 25 mOhm at VGS = 10 V —
Gate Charge (Qg) Typical 66.7 nC —
Gate-to-Source Voltage Max ±20 V —
Rentang Suhu Kerja -55C to +175C (Tj) —
Paket TO-247AC (3-pin + tab) TO-220AB (3-lead through-hole)
Tipe Mounting Through Hole Through Hole
Avalanche Rating Fully Avalanche Rated —
dv/dt Rating Dynamic dv/dt Rated —
Lead-Free Yes —
Status RoHS Compliant —
Technology IR MOSFET (HEXFET) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Part Number — IRFB3207ZPBF
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Suhu Hubung Kerja — -55 C to +175 C
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Level MSL — N/A (through-hole)
Avalanche Rated — Yes (improved Z-variant ruggedness)

Spek dan Sumber

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