IRFP3710PBF vs IRFB3207ZPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRFP3710PBF tarafından Infineon ve IRFB3207ZPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRFP3710PBF IRFB3207ZPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Series HEXFET, Fifth Generation HEXFET
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 57 A (Tc) —
Power Dissipation (PD) 200 W (Tc) —
On-Resistance RDS(on) Max 25 mOhm at VGS = 10 V —
Gate Charge (Qg) Typical 66.7 nC —
Gate-to-Source Voltage Max ±20 V —
İşletim Sıcaklığı Aralığı -55C to +175C (Tj) —
Paket TO-247AC (3-pin + tab) TO-220AB (3-lead through-hole)
Montaj Türü Through Hole Through Hole
Avalanche Rating Fully Avalanche Rated —
dv/dt Rating Dynamic dv/dt Rated —
Lead-Free Yes —
RoHS Durumu Compliant —
Technology IR MOSFET (HEXFET) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Part Number — IRFB3207ZPBF
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
İşletim Jant Sıcaklığı — -55 C to +175 C
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
MSL Seviyesi — N/A (through-hole)
Avalanche Rated — Yes (improved Z-variant ruggedness)

Dökümanlar & Kaynaklar

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