IRFR024NTRPBF vs IRLR024NTRPBF Comparison

Detailed side-by-side comparison of IRFR024NTRPBF by Infineon and IRLR024NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR024NTRPBF IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF βœ“ Active
Infineon
IRLR024NTRPBF IRLR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRLR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRLR024NTRPBF βœ“ Active

Specification Comparison

Parameter IRFR024NTRPBF IRLR024NTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.31 $0.46
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Product Series HEXFET Power MOSFET (5th generation) β€”
Transistor Type N-Channel MOSFET β€”
Maximum Drain-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) 17 A (at TC = 25 C) β€”
Pulsed Drain Current (IDM) 60 A β€”
On-Resistance (RDS(on)) 75 mOhm max (at VGS = 10 V) β€”
Gate-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V β€”
Typical Gate Charge (Qg) 13.3 nC β€”
Total Power Dissipation (PD) 45 W (at TC = 25 C) β€”
Operating Junction Temperature -55 C to +175 C β€”
Package TO-252-3 (DPAK, SC-63), surface mount TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Packaging Tape and Reel (TR) β€”
RoHS Compliance Compliant (Pb-free / PbF terminations) β€”
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
FET Type β€” N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (Vdss) β€” 55 V
Continuous Drain Current (Id) at Tc=25C β€” 17 A
Continuous Drain Current (Id) at Tc=100C β€” [DATA_NEEDED: Id at Tc=100C]
Rds(on) Max @ Vgs=10V β€” 65 mOhm
Gate Threshold Voltage (Vgs(th)) β€” 1.0 V to 2.0 V
Total Gate Charge (Qg) β€” 10 nC (typical)
Power Dissipation (Pd) at Tc=25C β€” 45 W
Operating Temperature Range β€” -55 C to +175 C
Technology β€” HEXFET (Advanced Process Technology)
Avalanche Rated β€” Yes (fully avalanche rated)
Gate Drive Level β€” Logic-Level
Lead-Free / RoHS β€” Lead-Free / RoHS Compliant

Datasheets & Resources

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