IRFR024NTRPBF vs IRLR024NTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR024NTRPBF disebabkan oleh Infineon dan IRLR024NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR024NTRPBF IRLR024NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Series HEXFET Power MOSFET (5th generation) —
Jenis Transistor N-Channel MOSFET —
Maximum Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) 17 A (at TC = 25 C) —
Pulsed Drain Current (IDM) 60 A —
On-Resistance (RDS(on)) 75 mOhm max (at VGS = 10 V) —
Gate-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Typical Gate Charge (Qg) 13.3 nC —
Total Power Dissipation (PD) 45 W (at TC = 25 C) —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan TO-252-3 (DPAK, SC-63), surface mount TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
RoHS Compliance Compliant (Pb-free / PbF terminations) —
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
FET Type — N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) at Tc=25C — 17 A
Continuous Drain Current (Id) at Tc=100C — [DATA_NEEDED: Id at Tc=100C]
Rds(on) Max @ Vgs=10V — 65 mOhm
Gate Threshold Voltage (Vgs(th)) — 1.0 V to 2.0 V
Total Gate Charge (Qg) — 10 nC (typical)
Power Dissipation (Pd) at Tc=25C — 45 W
Gambaran Suhu Operasi — -55 C to +175 C
Technology — HEXFET (Advanced Process Technology)
Avalanche Rated — Yes (fully avalanche rated)
Gate Drive Level — Logic-Level
Lead-Free / RoHS — Lead-Free / RoHS Compliant

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