IRFR024NTRPBF vs IRLR024NTRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR024NTRPBF sa pamamagitan ng Infineon at IRLR024NTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFR024NTRPBF IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF ✓ Nakahanda
Infineon
IRLR024NTRPBF IRLR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRLR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRLR024NTRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR024NTRPBF IRLR024NTRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Series HEXFET Power MOSFET (5th generation) —
Uri ng Transistor N-Channel MOSFET —
Maximum Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) 17 A (at TC = 25 C) —
Pulsed Drain Current (IDM) 60 A —
On-Resistance (RDS(on)) 75 mOhm max (at VGS = 10 V) —
Gate-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Typical Gate Charge (Qg) 13.3 nC —
Total Power Dissipation (PD) 45 W (at TC = 25 C) —
Temperature ng Junction na Operasyon -55 C to +175 C —
Packhaging TO-252-3 (DPAK, SC-63), surface mount TO-252AA (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
RoHS Compliance Compliant (Pb-free / PbF terminations) —
Level ng MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
FET Type — N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) at Tc=25C — 17 A
Continuous Drain Current (Id) at Tc=100C — [DATA_NEEDED: Id at Tc=100C]
Rds(on) Max @ Vgs=10V — 65 mOhm
Gate Threshold Voltage (Vgs(th)) — 1.0 V to 2.0 V
Total Gate Charge (Qg) — 10 nC (typical)
Power Dissipation (Pd) at Tc=25C — 45 W
Hanay ng Temperature na Operasyon — -55 C to +175 C
Technology — HEXFET (Advanced Process Technology)
Avalanche Rated — Yes (fully avalanche rated)
Gate Drive Level — Logic-Level
Lead-Free / RoHS — Lead-Free / RoHS Compliant

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