IRFR024NTRPBF vs IRLR024NTRPBF Perbandingan

Perbandingan bersamaan detil IRFR024NTRPBF dari Infineon dan IRLR024NTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR024NTRPBF IRLR024NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Series HEXFET Power MOSFET (5th generation) —
Tipe Transistor N-Channel MOSFET —
Maximum Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) 17 A (at TC = 25 C) —
Pulsed Drain Current (IDM) 60 A —
On-Resistance (RDS(on)) 75 mOhm max (at VGS = 10 V) —
Gate-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Typical Gate Charge (Qg) 13.3 nC —
Total Power Dissipation (PD) 45 W (at TC = 25 C) —
Suhu Hubung Kerja -55 C to +175 C —
Paket TO-252-3 (DPAK, SC-63), surface mount TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
RoHS Compliance Compliant (Pb-free / PbF terminations) —
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
FET Type — N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) at Tc=25C — 17 A
Continuous Drain Current (Id) at Tc=100C — [DATA_NEEDED: Id at Tc=100C]
Rds(on) Max @ Vgs=10V — 65 mOhm
Gate Threshold Voltage (Vgs(th)) — 1.0 V to 2.0 V
Total Gate Charge (Qg) — 10 nC (typical)
Power Dissipation (Pd) at Tc=25C — 45 W
Rentang Suhu Kerja — -55 C to +175 C
Technology — HEXFET (Advanced Process Technology)
Avalanche Rated — Yes (fully avalanche rated)
Gate Drive Level — Logic-Level
Lead-Free / RoHS — Lead-Free / RoHS Compliant

Spek dan Sumber

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