IRFR1205TRPBF vs IRFR3607TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR1205TRPBF sa pamamagitan ng Infineon at IRFR3607TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR1205TRPBF IRFR3607TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology HEXFET (IR MOSFET, 5th generation) IR HEXFET (planar DMOS)
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC=25C 44 A —
Pulsed Drain Current (IDM) 160 A —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max 4 V
On-Resistance RDS(on) at VGS=10V 27 mOhm max —
Total Gate Charge (Qg) 43.3 nC 56 nC
Power Dissition (PD) at TC=25C 107 W —
Temperature ng Junction na Operasyon -55C to +175C —
Packhaging TO-252AA (DPAK) TO-252AA (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant (PBF suffix = lead-free) —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] —
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID, Tc) — 56 A
Calculated Die Drain Current — 80 A
On-State Resistance (RDS(on)) — 9 mOhm @ VGS=10V, ID=46A
Gate-to-Source Voltage (VGS) Max — +/-20 V
Power Dissipation (PD, Tc) — 140 W
Thermal Resistance (RthJC) — 1.0 C/W
Hanay ng Temperature na Operasyon — -55C to +175C (TJ max 175C per datasheet convention)
Avalanche SOA — Fully characterized
RoHS / Lead-Free — Compliant / Pb-free (PBF suffix, JESD-609 e3)

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